WNM07N60 Datasheet - Will Semiconductor

WNM07N60 N-Channel MOSFET

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM07N60 Features

* 600V@TJ=25°C

* Typ.RDS(on)=1.0 Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220

WNM07N60-WillSemiconductor.pdf