Datasheet4U Logo Datasheet4U.com

WNM07N60

N-Channel MOSFET

WNM07N60 Features

* 600V@TJ=25°C

* Typ.RDS(on)=1.0 Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220

WNM07N60 General Description

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM07N60 Datasheet (1.70 MB)

Preview of WNM07N60 PDF

Datasheet Details

Part number:

WNM07N60

Manufacturer:

Will Semiconductor

File Size:

1.70 MB

Description:

N-channel mosfet.

📁 Related Datasheet

WNM07N60F N-Channel MOSFET (Will Semiconductor)

WNM07N65 N-Channel MOSFET (Will Semiconductor)

WNM07N65F N-Channel MOSFET (Will Semiconductor)

WNM01N10 MOSFET (WillSEMI)

WNM01N11 MOSFET (WillSEMI)

WNM05N60 MOSFET (WillSEMI)

WNM05N60F MOSFET (WillSEMI)

WNM12N65 N-Channel MOSFET (Will Semiconductor)

WNM12N65F N-Channel MOSFET (Will Semiconductor)

WNM2016 N-Channel MOSFET (Will Semiconductor)

TAGS

WNM07N60 N-Channel MOSFET Will Semiconductor

Image Gallery

WNM07N60 Datasheet Preview Page 2 WNM07N60 Datasheet Preview Page 3

WNM07N60 Distributor