WNM07N60 Datasheet, Mosfet, Will Semiconductor

WNM07N60 Features

• Mosfet
• 600V@TJ=25°C
• Typ.RDS(on)=1.0 Ω
• Low gate charge
• 100% avalanche tested
• 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =

PDF File Details

Part number:

WNM07N60

Manufacturer:

Will Semiconductor

File Size:

1.70MB

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📄 Datasheet

Description:

N-channel mosfet. The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to

WNM07N60 Application

• Applications power switching application and a wide variety of other applications. WNM07N60/WNM07N60F Features
• 600V@TJ=25°C
• Ty

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WNM07N60

Will Semiconductor

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