WNM01N10 - MOSFET
The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM01N10 is Pb-free and Halogen-
WNM01N10 Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Small package SOT-23 Applications
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging NA = Device C
