Datasheet Details
- Part number
- WNM01N10
- Manufacturer
- WillSEMI
- File Size
- 0.96 MB
- Datasheet
- WNM01N10-WillSEMI.pdf
- Description
- MOSFET
WNM01N10 Description
WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V .
The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.
WNM01N10 Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
WNM01N10 Applications
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging
NA = Device Code Y = Year W = Week
Marking
Order information
Device
Package
WNM01N10-3/TR SOT-23
Shipping 3000/Reel&Tape
Will Semiconductor Ltd. 1
2016/01/18
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