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WNM01N10 - MOSFET

WNM01N10 Description

WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V .
The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.

WNM01N10 Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current

WNM01N10 Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging NA = Device Code Y = Year W = Week Marking Order information Device Package WNM01N10-3/TR SOT-23 Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 2016/01/18

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Datasheet Details

Part number
WNM01N10
Manufacturer
WillSEMI
File Size
0.96 MB
Datasheet
WNM01N10-WillSEMI.pdf
Description
MOSFET

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MOSFET WillSEMI
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