WNM01N10

MOSFET

WillSEMI

WNM01N10 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Small package SOT-23 Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Load Switch

* Charging NA = Device C

WNM01N10 General Description

The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-.

WNM01N10 Datasheet (0.96 MB)

WNM01N10 Datasheet Preview — Preview of WNM01N10 PDF

Datasheet Details

Part number:

WNM01N10

Manufacturer:

WillSEMI

File Size:

0.96 MB

Description:

Mosfet.

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WNM01N10 MOSFET WillSEMI

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WNM01N10 Features

WNM01N10 General Description

Datasheet Details

File Size:

Description:

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