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WNM07N65F, WNM07N65 Datasheet - Will Semiconductor

WNM07N65F N-Channel MOSFET

The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM07N65F Features

* 650V@TJ=25°C

* Typ.RDS(on)=1.0 Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 FG S GD S TO-220F WNM07N65 CC Y W =Devices code = Special Code =Year =Week WNM07N65F =Devices code CC = Special Code Y =Year W =Week Order Information Device

WNM07N65-WillSemiconductor.pdf

This datasheet PDF includes multiple part numbers: WNM07N65F, WNM07N65. Please refer to the document for exact specifications by model.
WNM07N65F Datasheet Preview Page 2 WNM07N65F Datasheet Preview Page 3

Datasheet Details

Part number:

WNM07N65F, WNM07N65

Manufacturer:

Will Semiconductor

File Size:

1.44 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: WNM07N65F, WNM07N65.
Please refer to the document for exact specifications by model.

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TAGS

WNM07N65F WNM07N65 N-Channel MOSFET Will Semiconductor

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