WNM07N65 Datasheet - Will Semiconductor

WNM07N65 N-Channel MOSFET

The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM07N65 Features

* 650V@TJ=25°C

* Typ.RDS(on)=1.0 Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 FG S GD S TO-220F WNM07N65 CC Y W =Devices code = Special Code =Year =Week WNM07N65F =Devices code CC = Special Code Y =Year W =Week Order Information Device

WNM07N65-WillSemiconductor.pdf