WNM2020 Datasheet - TY Semiconductor

WNM2020 N-Channel MOSFET

The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) SOT-23 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free. 1 G D 3 .

WNM2020 Features

* Pin configuration (Top view) z z z z z Trench Technology Supper high density cell design 3 W28

* Excellent ON resistance 1 2 Extremely Low Threshold Voltage Small package SOT-23 W28 = Device Code

* = Month (A~Z) Marking Applications Order information z z z z z DC-DC converter circuit Sma

WNM2020 Datasheet (185.16 KB)