WNM2020 Datasheet (TY Semiconductor)

WNM2020, N-Channel MOSFET

The WNM2020 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench (ON) SOT-23 technology and design to provide excellent RDS with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Standard Product WNM2020 is Pb-free.

1 G D 3

WNM2020 Features

* Pin configuration (Top view) z z z z z Trench Technology Supper high density cell design 3 W28

* Excellent ON resistance 1 2 Extremely Low Threshold Voltage Small package SOT-23 W28 = Device Code

* = Month (A~Z) Marking Applications Order information z z z z z DC-DC converter circuit Sma