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WNM12N65F, WNM12N65 Datasheet - Will Semiconductor

WNM12N65F N-Channel MOSFET

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM12N65F Features

* 650V@TJ=25°C

* Typ.RDS(on)=0.57Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N

WNM12N65-WillSemiconductor.pdf

This datasheet PDF includes multiple part numbers: WNM12N65F, WNM12N65. Please refer to the document for exact specifications by model.
WNM12N65F Datasheet Preview Page 2 WNM12N65F Datasheet Preview Page 3

Datasheet Details

Part number:

WNM12N65F, WNM12N65

Manufacturer:

Will Semiconductor

File Size:

1.01 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: WNM12N65F, WNM12N65.
Please refer to the document for exact specifications by model.

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TAGS

WNM12N65F WNM12N65 N-Channel MOSFET Will Semiconductor

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