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WNM12N65F Datasheet - Will Semiconductor

WNM12N65F N-Channel MOSFET

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM12N65F Features

* 650V@TJ=25°C

* Typ.RDS(on)=0.57Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N

WNM12N65F Datasheet (1.01 MB)

Preview of WNM12N65F PDF
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Datasheet Details

Part number:

WNM12N65F

Manufacturer:

Will Semiconductor

File Size:

1.01 MB

Description:

N-channel mosfet.

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WNM12N65F N-Channel MOSFET Will Semiconductor

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