Part number:
WNM2016
Manufacturer:
TY Semiconductor
File Size:
103.01 KB
Description:
N-channel power mosfet.
* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6
* 2 = Device Code = Month (A~Z) Marking WT6
* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converte
WNM2016
TY Semiconductor
103.01 KB
N-channel power mosfet.
📁 Related Datasheet
WNM2016 - N-Channel MOSFET
(Will Semiconductor)
WNM2016
N-Channel, 20V, 3.2A, Power MOSFET
WNM2016
Http://.willsemi.
V(BR)DSS 20
Rds(on)
40 @ 4.5V 47 @ 2.5V 55 @ 1.8V
Descriptions
The WNM2.
WNM2020 - N-Channel MOSFET
(Will Semiconductor)
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V
WNM2020
Http//:.wills.
WNM2020 - N-Channel MOSFET
(TY Semiconductor)
Product specification
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V
De.
WNM2020-3 - N-Channel MOSFET
(VBsemi)
WNM2020-3/TR
WNM2020-3/TR Datasheet
.VBsemi.
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0..
WNM2021 - N-Channel MOSFET
(Will Semiconductor)
WNM2021
WNM2021
N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.3.
WNM2023 - N-Channel MOSFET
(TY Semiconductor)
Product specification
WNM2023
Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23.
WNM2024 - N-Channel MOSFET
(VBsemi)
WNM2024-VB
WNM2024-VB Datasheet
N-Channel 20 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 a.
WNM2024 - N-Channel MOSFET
(Will Semiconductor)
WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V
Descriptions
The WNM2024 .
