WNM2016 Datasheet - TY Semiconductor

N-Channel Power MOSFET

WNM2016 Features

* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6

* 2 = Device Code = Month (A~Z) Marking WT6

* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converte

WNM2016 General Description

The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2016 is Pb-free. Co.

WNM2016 Datasheet (103.01 KB)

WNM2016 Datasheet Preview — Preview of WNM2016 PDF

Datasheet Details

Part number:

WNM2016

Manufacturer:

TY Semiconductor

File Size:

103.01 KB

Description:

N-channel power mosfet.

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WNM2016 N-Channel Power MOSFET TY Semiconductor

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WNM2016 Features

WNM2016 General Description

Datasheet Details

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