WNM2016 Datasheet (TY Semiconductor) - N-Channel Power MOSFET

WNM2016, N-Channel Power MOSFET

The WNM2016 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Standard Product WNM2016 is Pb-free.

WNM2016 Features

* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6

* 2 = Device Code = Month (A~Z) Marking WT6

* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converte