WNM2016 Datasheet, Mosfet, TY Semiconductor

WNM2016 Features

  • Mosfet 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6
  • 2 = Devi

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Part number:

WNM2016

Manufacturer:

TY Semiconductor

File Size:

103.01kb

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📄 Datasheet

Description:

N-channel power mosfet. The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD

Datasheet Preview: WNM2016 📥 Download PDF (103.01kb)
Page 2 of WNM2016 Page 3 of WNM2016

WNM2016 Application

  • Applications Standard Product WNM2016 is Pb-free. Configuration (Top View) Features 3 z z z z z Trench Technology Supper high density cell design

TAGS

WNM2016
N-Channel
Power
MOSFET
TY Semiconductor

📁 Related Datasheet

WNM2016 - N-Channel MOSFET (Will Semiconductor)
WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://.willsemi. V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55 @ 1.8V Descriptions The WNM2.

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Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V De.

WNM2020-3 - N-Channel MOSFET (VBsemi)
WNM2020-3/TR WNM2020-3/TR Datasheet .VBsemi. N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0..

WNM2021 - N-Channel MOSFET (Will Semiconductor)
WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.3.

WNM2023 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23.

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WNM2024-VB WNM2024-VB Datasheet N-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.

WNM2024 - N-Channel MOSFET (Will Semiconductor)
WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V Descriptions The WNM2024 .

WNM2024 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23.

WNM2025 - N-Channel MOSFET (TY Semiconductor)
Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-2.

Stock and price

Will Semiconductor Ltd
Bristol Electronics
WNM2016-3/TR
1620 In Stock
0
Unit Price : $0
No Longer Stocked
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