WNM4153 N-Channel MOSFET

Will Semiconductor

Description

WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 RDS(on) (Ω) 0.220 @ VGS=4.5V 0.260 @ VGS=2.5V 0.320 @ VGS=1.8V .
The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with l.

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Datasheet Specifications

Part number: WNM4153
Manufacturer: Will Semiconductor
File Size: 322.05 KB
Datasheet: WNM4153-WillSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 WNM4153 Http://www. willsemi. com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3F 12 N3 = Device Code F = Month Marking App

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WNM4153 N-Channel MOSFET Will Semiconductor

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