* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) W46
* W46
* = Device Code = Month (A~Z) Applicatio
WNM4006
Will Semiconductor
124.69 KB
N-channel mosfet.
WNM4006
Single N-Channel, 45V, 1.7A, Power MOSFET
VDS (V) 45
Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V
Descriptio.
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