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WNM4001 Small Signal N-Channel MOSFET

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Description

WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET V(BR)DSS 20 V RDS(on) Max.0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V ID MAX 0.5A 0.3A 0.1A .
The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with l.

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Datasheet Specifications

Part number
WNM4001
Manufacturer
Will Semiconductor
File Size
108.86 KB
Datasheet
WNM4001-WillSemiconductor.pdf
Description
Small Signal N-Channel MOSFET

Features

* z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www. willsemi. com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3
* 12 N3 = Device Code
* = M

Applications

* z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device Order Information Device Package WNM4001-3/TR SOT-523 Shipping 3000/Tape&Reel Will Semiconductor Ltd. 1 Nov, 2011 - Rev. 1.3 Absolute Maximum Ratings (TA=25oC unless other

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