TP44100NM hemt equivalent, 650v gan hemt.
* 650V enhancement mode HEMT with integrated driver
* 90mΩ RDSON
* 5V PWM input
* UVLO protection
* Zero reverse recovery
* Low quiescent current .
* As switching FETs in singles, or in pairs as half-bridges
* AC-DC, DC-DC, DC-AC converters
* PFC applicati.
The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device mak.
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