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TP44100NM Datasheet, Tagore

TP44100NM hemt equivalent, 650v gan hemt.

TP44100NM Avg. rating / M : 1.0 rating-134

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TP44100NM Datasheet

Features and benefits


* 650V enhancement mode HEMT with integrated driver
* 90mΩ RDSON
* 5V PWM input
* UVLO protection
* Zero reverse recovery
* Low quiescent current .

Application


* As switching FETs in singles, or in pairs as half-bridges
* AC-DC, DC-DC, DC-AC converters
* PFC applicati.

Description

The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device mak.

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TP44100NM Page 1

TAGS

TP44100NM
650V
GaN
HEMT
Tagore

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