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TP44200NM - 650V GaN HEMT

Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.

Features

  • 650 V enhancement mode HEMT with integrated driver.
  • RDSON: 180 mΩ.
  • IDS: 10 A (max) / IDSpulse: 15 A (max).
  • 5 V PWM input.
  • UVLO protection.
  • Zero reverse recovery.
  • Low quiescent current driver.
  • Adjustable turn-on slew rate.
  • Dv/Dt immunity both with/without driver-supply.
  • Low propagation delay for up to 2 MHz operation.
  • Thermal pad (LV) isolated from the source for better thermal connection even with.

📥 Download Datasheet

Datasheet Details

Part number TP44200NM
Manufacturer Tagore
File Size 1.02 MB
Description 650V GaN HEMT
Datasheet download datasheet TP44200NM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A (max) • 5 V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2 MHz operation • Thermal pad (LV) isolated from the source for better thermal connection even with sense resistors (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.85 mm QFN Package) 2.
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