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TP44200NM

650V GaN HEMT

TP44200NM Features

* 650 V enhancement mode HEMT with integrated driver

* RDSON: 180 mΩ

* IDS: 10 A (max) / IDSpulse: 15 A (max)

* 5 V PWM input

* UVLO protection

* Zero reverse recovery

* Low quiescent current driver

* Adjustable turn-on slew rate

TP44200NM General Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device makes the applications more efficient and reliable.

TP44200NM Datasheet (1.02 MB)

Preview of TP44200NM PDF

Datasheet Details

Part number:

TP44200NM

Manufacturer:

Tagore

File Size:

1.02 MB

Description:

650v gan hemt.

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TAGS

TP44200NM 650V GaN HEMT Tagore

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