TP44200NM hemt equivalent, 650v gan hemt.
* 650 V enhancement mode HEMT with integrated driver
* RDSON: 180 mΩ
* IDS: 10 A (max) / IDSpulse: 15 A (max)
* 5 V PWM input
* UVLO protection
* .
* As switching FETs in singles, or in pairs as half-bridges
* AC-DC, DC-DC, DC-AC converters
* PFC applicati.
The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device .
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