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TP44200NM - 650V GaN HEMT

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Datasheet Details

Part number	TP44200NM
Manufacturer	Tagore
File Size	1.02 MB
Description	650V GaN HEMT
Datasheet	TP44200NM-Tagore.pdf

TP44200NM Product details

Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

Features

650 V enhancement mode HEMT with integrated driver.
RDSON: 180 mΩ.
IDS: 10 A (max) / IDSpulse: 15 A (max).
5 V PWM input.
UVLO protection.
Zero reverse recovery.
Low quiescent current driver.
Adjustable turn-on slew rate.
Dv/Dt immunity both with/without driver-supply.
Low propagation delay for up to 2 MHz operation.
Thermal pad (LV) isolated from the source for better thermal connection even with.

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Published: Dec 4, 2024 |