TSM85N10 Description
Source TSM85N10 100V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 10 @ VGS =10V ID (A).
TSM85N10 Key Features
- Advanced Trench Technology
- Low RDS(ON) 10mΩ (Max.)
- Low gate charge typical @ 154nC (Typ.)
- Low Crss typical @ 170pF (Typ.)