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TSM85N10 Datasheet, MOSFET, Taiwan Semiconductor

TSM85N10 Datasheet, MOSFET, Taiwan Semiconductor

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TSM85N10 Features and benefits

TSM85N10 Features and benefits


* Advanced Trench Technology
* Low RDS(ON) 10mΩ (Max.)
* Low gate charge typical @ 154nC (Typ.)
* Low Crss typical @ 170pF (Typ.) Ordering Information .

TSM85N10 Application

TSM85N10 Application

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

TSM85N10 Description

TSM85N10 Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or impli.

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TAGS

TSM85N10
N-Channel
Power
MOSFET
Taiwan Semiconductor

Manufacturer


Taiwan Semiconductor

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