TSM85N10 - N-Channel Power MOSFET

Product Overview

Taiwan Semiconductor

Part number	TSM85N10
Manufacturer	Taiwan Semiconductor
File Size	277.85 KB
Description	N-Channel Power MOSFET
Datasheet	TSM85N10 Datasheet
Additional preview pages of the TSM85N10 datasheet.

only.

Advanced Trench Technology.
Low RDS(ON) 10mΩ (Max. ).
Low gate charge typical @ 154nC (Typ. ).
Low Crss typical @ 170pF (Typ. ) Ordering Information Part No. TSM85N10CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH Maximum P.

📁 Similar Datasheet

TSM802 - 20V N-Channel MOSFET w/ESD Protected (Taiwan Semiconductor Company)
TSM8405P - Single P-Channel 1.8V Specified MicroSURF MOSFET (Taiwan Semiconductor Company)
TSM-102-01-S-SV - TSM Series / Terminal Strips (Samtec)
TSM-105-01-S-DV - SQ POST HEADER (Samtec)
TSM-105-01-xxx - Terminal Strips (Samtec)
TSM-108-xx - TERMINAL STRIPS (Samtec)
TSM-1250 - Single Point (TRANSCELL)
TSM-3E20 - VCSEL (ETC)

Other Datasheets by Taiwan Semiconductor

Published: Apr 23, 2016 |