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TSM85N10 - N-Channel Power MOSFET

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Description

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Features

  • Advanced Trench Technology.
  • Low RDS(ON) 10mΩ (Max. ).
  • Low gate charge typical @ 154nC (Typ. ).
  • Low Crss typical @ 170pF (Typ. ) Ordering Information Part No. TSM85N10CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH Maximum P.

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Datasheet Details

Part number TSM85N10
Manufacturer Taiwan Semiconductor
File Size 277.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM85N10 Datasheet
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Full PDF Text Transcription

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TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM85N10 100V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 10 @ VGS =10V ID (A) 81 Features ● Advanced Trench Technology ● Low RDS(ON) 10mΩ (Max.) ● Low gate charge typical @ 154nC (Typ.) ● Low Crss typical @ 170pF (Typ.) Ordering Information Part No. TSM85N10CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.
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