TSM8N80 Datasheet - Taiwan Semiconductor

N-Channel Power MOSFET

TSM8N80 Features

* Low RDS(ON) 1.4Ω (Max.) Low gate charge typical @ 41nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM8N80CZ C0 TSM8N80CZ C0G Package TO-220 TO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM8N80CI C0G ITO-220 50pcs / Tube Note: “G” d

TSM8N80 General Description

The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

TSM8N80 Datasheet (409.13 KB)

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TSM8N80

Manufacturer:

Taiwan Semiconductor

File Size:

409.13 KB

Description:

N-channel power mosfet.
TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.4 @ VGS =10V .

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TSM8N80 Features

TSM8N80 General Description

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