TSM85N10 - N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Part number	TSM85N10
Manufacturer	Taiwan Semiconductor
File Size	277.85 KB
Description	N-Channel Power MOSFET
Datasheet	TSM85N10-TaiwanSemiconductor.pdf

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Advanced Trench Technology.
Low RDS(ON) 10mΩ (Max. ).
Low gate charge typical @ 154nC (Typ. ).
Low Crss typical @ 170pF (Typ. ) Ordering Information Part No. TSM85N10CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH Maximum P.

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Published: Apr 23, 2016 |