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2SB552 - SILICON PNP TRANSISTOR

Features

  • High Collector Power Dissipation.
  • High Collector Current : I C=-15A.
  • High Voltage : VCEO=-180V.
  • Complementary to 2SD552. P C=150W (Tc=25°C).

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Datasheet Details

Part number 2SB552
Manufacturer Toshiba
File Size 123.04 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB552 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Collector Power Dissipation • High Collector Current : I C=-15A • High Voltage : VCEO=-180V • Complementary to 2SD552. P C=150W (Tc=25°C) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation SYMBOL v CBO VCEO VEBO ic IB RATING -220 180 -5 -15 -3 150 UNIT 1. BASE 2.
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