2SC2553 - Silicon NPN Transistor

Toshiba

Key Features

. Excellent Switching Times : t r =1.0/is(Max. ), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400V.

2SC2553 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2553
Manufacturer	Toshiba
File Size	125.31 KB
Description	Silicon NPN Transistor
Datasheet	2SC2553 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX.. . 03.6±O-2 FEATURES: . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range V CBO 'CEO ^EBO L stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current lEBO 500 V 400 1.5 40 150 -55-150 1. BASE 2.