2SD549 transistor equivalent, silicon npn transistor.
* High DC Current Gain : hFE=4000(Min.) (VCE=2V, I c=150mA)
* Low Saturation Voltage
: V CE(sat)=1.5V(Max.) (I C=1A, I B=lmA)
MAXIMUM RATINGS (Ta=25°C) CHARACT.
SWITCHING APPLICATIONS.
7.9MAX.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
FEATURES
* High DC Current Gain : hFE.
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