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2SD549 - Silicon NPN Transistor

Key Features

  • High DC Current Gain : hFE=4000(Min. ) (VCE=2V, I c=150mA).
  • Low Saturation Voltage : V CE(sat)=1.5V(Max. ) (I C=1A, I B=lmA).

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Datasheet Details

Part number 2SD549
Manufacturer Toshiba
File Size 112.62 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD549 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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t : SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER) 2SD549 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 7.9MAX. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES • High DC Current Gain : hFE=4000(Min.) (VCE=2V, I c=150mA) • Low Saturation Voltage : V CE(sat)=1.5V(Max.) (I C=1A, I B=lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VcBO 30 Collector-Emitter Voltage VCEO 30 Emi t er-Base Voltage v EBO 10 Continuous Collector Current ic 1.5 Collector Power Dissipation PC 1.0 (Ta=25°C) Junction Temperature 150 UNIT Storage Temperature Range L stg -55M.50 EQUIVALENT CIRCUIT BASE <: ..COLLECTOR 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO — 126 2 — 8P 1 A Mounting Kit No. AC46C Weight : 0.