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Toshiba Electronic Components Datasheet

30J301 Datasheet

Silicon N-Channel IGBT

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GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
l The 3rd Generation
l EnhancementMode
l High Speed
: tf = 0.30µs (Max.)
l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
l FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
CollectorEmitter Voltage
GateEmitter Voltage
DC
Collector Current
1ms
EmitterCollector Forward
DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
RATING
600
±20
30
60
30
60
155
150
55~150
EQUIVALENT CIRCUIT
UNIT
V
V
A
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6g
216C1C
1
2002-02-06


Toshiba Electronic Components Datasheet

30J301 Datasheet

Silicon N-Channel IGBT

No Preview Available !

GT30J301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Gate Leakage Current
Collector CutOff Current
GateEmitter CutOff Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
TurnOn Time
Fall Time
TurnOff Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
IGES
VGE = ±20V, VCE = 0
ICES
VCE = 600V, VGE = 0
VGE (OFF) IC = 3mA, VCE = 5V
5.0
VCE (sat) IC = 30A, VGE = 15V
Cies
VCE = 20V, VGE = 0, f = 1MHz
tr
Inductive Load
ton
VCC = 300V, IC = 30A
tf
VGG = ±15V, RG = 43
(Note)
toff
VF
IF = 30A, VGE = 0
trr
IF = 30A, di / dt = 100A / µs
Rth (jc)
Rth (jc)
Note : Switching time measurement circuit and input / output waveforms
TYP.
2.1
2200
0.12
0.40
0.15
0.70
MAX UNIT
±500
1.0
8.0
2.7
0.30
2.0
200
0.81
2.0
nA
mA
V
V
pF
µs
V
ns
°C / W
°C / W
Switching loss measurement waveforms
2
2002-02-06


Part Number 30J301
Description Silicon N-Channel IGBT
Maker Toshiba
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30J301 Datasheet PDF






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