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GT60PR21 - Silicon N-Channel IGBT

Datasheet Summary

Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ. ) (IC = 60 A) FWD trr = 0.60 µs (typ. ) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ. ) (IC = 60 A) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.

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Datasheet Details

Part number GT60PR21
Manufacturer Toshiba
File Size 219.40 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT60PR21 Datasheet
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Full PDF Text Transcription

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Discrete IGBTs Silicon N-Channel IGBT GT60PR21 GT60PR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.
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