GT60PR21 - Silicon N-Channel IGBT

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Toshiba

Part number	GT60PR21
Manufacturer	Toshiba
File Size	219.40 KB
Description	Silicon N-Channel IGBT
Datasheet	GT60PR21 Datasheet
Additional preview pages of the GT60PR21 datasheet.

(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ. ) (IC = 60 A) FWD trr = 0.60 µs (typ. ) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ. ) (IC = 60 A) (6) High junction temperature: Tj = 175  (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.

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Published: Jan 30, 2024 |