HN1A02F Toshiba (https://www.toshiba.com/) Silicon PNP Epitaxial Type Transistor

Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F HN1A02F Audio Frequency Power Amplifier Applications Switching applications z High hFE : hFE(1) = 120 to 400 z Low VCE(sat.) : VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA) z Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristic Symbol Rating Unit Collector...
Features the TOSHIBA 2-3N1A reliability significantly even if the operating conditions (i.e. operating Weight: 0.015mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and ...

Datasheet PDF File HN1A02F Datasheet 139.12KB

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