HN1D01F Description
HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit: mm HN1D01F is posed of 2 unit of anode mon. VF (3) = 0.92 V (typ.) Fast reverse recovery time.
HN1D01F Datasheet
| Part number | HN1D01F |
|---|---|
| Download | HN1D01F Datasheet (PDF) |
| File Size | 402.87 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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