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HN1D01F - Silicon Epitaxial Planar Type Diode

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HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit: mm  HN1D01F is composed of 2 unit of anode common.  Low forward voltage : VF (3) = 0.92 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 2.2 pF (typ.
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