HN1D02F Overview
HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Ultra High Speed Switching Application Unit: mm The HN1D02F is posed of two (2) cathode mon units. VF (3) = 0.90 V (typ.) Fast reverse recovery time.
HN1D02F Details
| Part number | HN1D02F |
|---|---|
| Datasheet | HN1D02F Datasheet PDF (Download) |
| File Size | 350.22 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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