HN1D02FE Datasheet - Toshiba

HN1D02FE Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application HN1D02FE Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF (3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward curr.

HN1D02FE-Toshiba.pdf