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HN2D02FU Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Type Diode

Toshiba
Description TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU HN2D02FU Ultra High Speed Switching Application Unit: mm  AEC-Q101 Qualified (Note1)  HN2D02FU is composed of 3 independent diodes.  Low forward voltage : VF(3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 pF (typ.) Note1: For detail information, please contact our sales. Ab...
Features gh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semicond...

Datasheet PDF File HN2D02FU Datasheet 510.38KB

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