HN2S01FU Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Low Voltage High Speed Switching Application HN2S01FU Unit: mm z HN2S01FU is posed of 3 independent diodes. Using continuously under heavy loads (e.g.
HN2S01FU Details
| Part number | HN2S01FU |
|---|---|
| Datasheet | HN2S01FU Datasheet PDF (Download) |
| File Size | 201.76 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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