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HN4B102J - Silicon PNP/NPN Transistor

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Datasheet Details

Part number HN4B102J
Manufacturer Toshiba
File Size 212.82 KB
Description Silicon PNP/NPN Transistor
Datasheet download datasheet HN4B102J Datasheet

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Full PDF Text Transcription

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HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) • Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max) • High-speed switching : PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.) 2.9±0.2 1.9±0.2 0.95 0.95 　　+0.2 2.8 -0.3 　　+0.2 1.6 -0.1 Unit: mm 0.4±0.1 15 2 4 3 　　　+0.1 0.16 -0.06 　　+0.2 1.1 -0.
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