MG1200V1US51 igbt equivalent, toshiba gtr module silicon n−channel igbt.
l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS Collector−Emitter Voltage .
MOTOR CONTROL APPLICATIONS
FEATURES
l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.
EQU.
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