SSM3K35CTC mosfet equivalent, silicon n-channel mosfet.
(1) 1.2-V gate drive voltage. (2) Low drain-source on-resistance
RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(.
* High-Speed Switching
* Analog Switches
2. Features
(1) 1.2-V gate drive voltage. (2) Low drain-source on-resis.
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