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TC57256AD-15 - CMOS ultraviolet light erasable and electrically programmable read only memory

Download the TC57256AD-15 datasheet PDF. This datasheet also covers the TC57256AD variant, as both devices belong to the same cmos ultraviolet light erasable and electrically programmable read only memory family and are provided as variant models within a single manufacturer datasheet.

Description

The TC57256AD is a 32,768 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.

For read operation, the TC57256AD's access time is 150ns.

Features

  • Peripheral circuit: CMOS Memory cell : N-MOS Low power dissipation Active: 40mA/6.7MHz Standby: lOO~A.
  • Fast access time: TC572S6AD-IS lSOns TCS7256AD-20 200ns IPIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC57256AD-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC57256AD-15
Manufacturer Toshiba
File Size 323.67 KB
Description CMOS ultraviolet light erasable and electrically programmable read only memory
Datasheet download datasheet TC57256AD-15 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC57256AD-20 CMOS ultraviolet light erasable and electrically programmable read only memory
TC57256AD CMOS ultraviolet light erasable and electrically programmable read only memory
TC57256D-20 CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TC57256D-25 CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TC571000D SILICON STACKED GATE MOS

Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT I DESCRIPTIONI TC57256AD-15 TC57256AD-20 The TC57256AD is a 32,768 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC57256AD's access time is 150ns. The TC57256AD operates from a single 5-volt power supply and has a low power standby mode which reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. Advanced CMOS technology reduces the maximum active current to 40mN6.7MHz and the standby current to lOOJ.LA. For program operation, the programming is achieved by using the high speed prgramming mode. The TC57256AD is fabricated using CMOS technology and N-channel silicon double layer gate MOS technology.
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