TC571000D, TC571001D Datasheet - Toshiba

TC571000D SILICON STACKED GATE MOS

TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V. Erasable & Electrically Programmable Read Only Memory TC5710000-20, TC571 0000-25 TC571 0010-20, TC571 0010-25 IOESCRIPTIONj The TC57l000D/TC57l00lD is a 131,072 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC57l000D is JEDEC standard pin configuration and the TC57l00lD is compatible with 28 pin It-! bit Mask ROM. Both products are packed in 32 p.

TC571000D Features

* with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm. IFEATURESI

* Peripheral circuit: CMOS Memory cell

TC571001D-Toshiba.pdf