TC571001D SILICON STACKED GATE MOS

Toshiba

Description

TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V.Erasable & Electrically Programmable Read Only Memor.

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Datasheet Specifications

Part number: TC571001D
Manufacturer: Toshiba ↗
File Size: 376.24 KB
Datasheet: TC571001D-Toshiba.pdf
Description: SILICON STACKED GATE MOS

Features

* with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm. IFEATURESI
* Peripheral circuit: CMOS Memory cell

TC571001D Distributors

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SILICON STACKED GATE MOS Toshiba

Toshiba TC571001D-like datasheet