TC571001D Datasheet, Mos, Toshiba

TC571001D Features

• Mos with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 se

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TC571001D

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Toshiba ↗

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📄 Datasheet

Description:

Silicon stacked gate mos.

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TC571001D

Toshiba

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