TC571000D-25, TC571001D SILICON STACKED GATE MOS

Toshiba

Description

TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V.Erasable & Electrically Programmable Read Only Memor.

📥 Download Datasheet

TC571000D-25 Datasheet Preview — This datasheet PDF includes multiple part numbers: TC571000D-25, TC571001D. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TC571000D-25, TC571001D
Manufacturer: Toshiba ↗
File Size: 376.24 KB
Datasheet: TC571001D-Toshiba.pdf
Description: SILICON STACKED GATE MOS
Note: This datasheet PDF includes multiple part numbers: TC571000D-25, TC571001D.
Please refer to the document for exact specifications by model.

Features

* with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm. IFEATURESI
* Peripheral circuit: CMOS Memory cell

TC571000D-25 Distributors

📁 Related Datasheet

TC572502 - (TC572502/3002/3302) Line Regulator Controller (Microchip Technology)
TC573002 - (TC572502/3002/3302) Line Regulator Controller (Microchip Technology)
TC573302 - (TC572502/3002/3302) Line Regulator Controller (Microchip Technology)
TC5747 - Single Chip CMOS Imager (ETC)
TC57512AD-15 - 65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY (ETC)
TC57512AD-20 - 65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY (ETC)

📌 All Tags

SILICON STACKED GATE MOS Toshiba

Toshiba TC571000D-25-like datasheet