* with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm. IFEATURESI
* Peripheral circuit: CMOS Memory cell
TC571000D-20 Datasheet (376.24 KB)
TC571000D-20
376.24 KB
Silicon stacked gate mos.
TOSHIBA MOS MEMORY PRODUCT
1 MEGA BIT (131 ,072 WORD X 8 BIT)
SILICON STACKED GATE MOS CMOS U.V. Erasable & Electrically Programmable Read Only Memor.
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