TC58NVG2S0FBAI4 - 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

Toshiba

General Description

The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.

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TC58NVG2S0FBAI4 4 gbit (512m x 8-bit) cmos nand e2prom by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC58NVG2S0FBAI4
Manufacturer	Toshiba
File Size	670.01 KB
Description	4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Datasheet	TC58NVG2S0FBAI4 Datasheet

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TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks. The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  14 Kbytes: 4320 bytes  64 pages). The TC58NVG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.