TC58NVG2S0FTA00
Description
The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks. The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments.
Key Features
- Organization Memory cell array Register Page size Block size x8 4320 × 128K × 8 4320 × 8 4320 bytes (256K + 14K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 2008 blocks Max 2048 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF)
- Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 3 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
- 4bit ECC for each 512Byte is required.
