TC58NVG3D2ETA00
Key Features
- Organization Memory cell array Register Page size Block size *
- TC58NVG3D2E 8568 × 128.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Mode control Serial input/output Command control Number of valid blocks Min 984 blocks Max 1028 blocks Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (30 ns cycle) Program (avg.) Erase (avg.) Standby 200 µs max 25 ns min 1400 µs/page typ. 3 ms/block typ. 30 mA max. 30 mA max. 30 mA max. 100 µA max (Weight: 0.53 g typ.) * * * * * *
- Package TSOP I 48-P-1220-0.50C
