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TC58NVG3D2ETA00 8 GBIT (1G X 8 BIT) CMOS NAND E2PROM

TC58NVG3D2ETA00 Description

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG3D2ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G × 8 BIT) CMOS NAND E PROM (Mul.
The TC58NVG3D2 is a single 3.

TC58NVG3D2ETA00 Features

* Organization Memory cell array Register Page size Block size
* TC58NVG3D2E 8568 × 128.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Mode control Serial input/output Command control Number of v

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GBIT BIT CMOS NAND E2PROM Toshiba
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