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TC58NVG1S3BFT00 2-GBit CMOS NAND EPROM

TC58NVG1S3BFT00 Description

w m INTEGRATED CIRCUIT SILICON GATE CMOS o TENTATIVE TOSHIBA MOS DIGITAL .c U × 16 BIT) CMOS NAND E2PROM 2 GBIT (256M × 8 BIT/128M 4 t .
e e h S a at . Organization Memory cell array Register Page size Block size. TC58NVG1S3B 2112 × 128K × 8 21.

TC58NVG1S3BFT00 Features

* Organization Memory cell array Register Page size Block size
* TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words TC58NVG1S3BFT00/TC58NVG1S8BFT00 The TC58NVG1SxB is a single 3.3 V 2 Gbit (

TC58NVG1S3BFT00 Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. Modes Read, Reset, Auto Page Program, Auto Block Erase
* C Status Read Mode control Serial input/output Command control Number

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2-GBit CMOS NAND EPROM Toshiba
Toshiba TC58NVG1S3BFT00-like datasheet