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TC58NVG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58NVG1S3HBAI4 Description

TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM .
The TC58NVG1S3HBAI4 is a single 3.

TC58NVG1S3HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode cont

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📌 All Tags

GBIT 256M BIT CMOS NAND E2PROM Toshiba
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