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TC58NVG1S3ETA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58NVG1S3ETA00 Description

TC58NVG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM .
The TC58NVG1S3E is a single 3.

TC58NVG1S3ETA00 Features

* Organization Memory cell array Register Page size Block size
* x8 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode cont

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GBIT 256M BIT CMOS NAND E2PROM Toshiba
Toshiba TC58NVG1S3ETA00-like datasheet