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TC58NVG1S3ETAI0 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM

TC58NVG1S3ETAI0 Description

TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM .
The TC58NVG1S3E is a single 3.

TC58NVG1S3ETAI0 Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memo

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GBIT 256M 8-BIT CMOS NAND E2PROM Toshiba
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