TC58NVG1S3HBAI6 - 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM
The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks.
The device has two 2176-byte static registers which allow program and read data to be transferred betwe
TC58NVG1S3HBAI6 Features
* Organization x8 Memory cell array 2176 128K 8 Register 2176 8 Page size 2176 bytes Block size (128K 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* M
