TC58NVG1S3HBAI6 - 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

Name: TC58NVG1S3HBAI6
SKU: TC58NVG1S3HBAI6-1096594

Toshiba

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Datasheet Details

Part number	TC58NVG1S3HBAI6
Manufacturer	Toshiba
File Size	715.49 KB
Description	2G-BIT (256M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NVG1S3HBAI6-Toshiba.pdf

TC58NVG1S3HBAI6 Product details

Description

The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.

Features

Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 2008 blocks Max 2048 blocks.
Power supply VCC  2.7V to 3.6V.
Access time Cell array to register 25 s max.

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Published: Feb 15, 2017 |