TC58NVG1S3HBAI6 Datasheet - Toshiba

TC58NVG1S3HBAI6 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred betwe.

TC58NVG1S3HBAI6 Features

* Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

* M

TC58NVG1S3HBAI6-Toshiba.pdf