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TC58NVG1S3HBAI6 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

TC58NVG1S3HBAI6 Description

TC58NVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM .
The TC58NVG1S3HBAI6 is a single 3.

TC58NVG1S3HBAI6 Features

* Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* M

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2G-BIT 256M BIT CMOS NAND E2PROM Toshiba
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