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TC58NVG1S3HTAI0

2-GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58NVG1S3HTAI0 Features

* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

* Mode cont

TC58NVG1S3HTAI0 General Description

The TC58NVG1S3HTAI0 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred betwe.

TC58NVG1S3HTAI0 Datasheet (1.23 MB)

Preview of TC58NVG1S3HTAI0 PDF

Datasheet Details

Part number:

TC58NVG1S3HTAI0

Manufacturer:

Toshiba ↗

File Size:

1.23 MB

Description:

2-gbit (256m x 8 bit) cmos nand e2prom.

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TAGS

TC58NVG1S3HTAI0 2-GBIT 256M BIT CMOS NAND E2PROM Toshiba

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