TC58NVG1S3EBAI4 Datasheet - Toshiba

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TC58NVG1S3EBAI4 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM

TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM .
The TC58NVG1S3E is a single 3.

TC58NVG1S3EBAI4-Toshiba.pdf

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Datasheet Details

Part number:

TC58NVG1S3EBAI4

Manufacturer:

Toshiba ↗

File Size:

839.35 KB

Description:

2 GBIT (256M x 8-BIT) CMOS NAND E2PROM

Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memo

TC58NVG1S3EBAI4 Distributors

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TC58NVG1S3EBAI4 GBIT 256M 8-BIT CMOS NAND E2PROM Toshiba

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