TC58NVM9S3ETA00 - 512M BIT (64M x 8 BIT) CMOS NAND E2PROM

Toshiba

General Description

The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.

📥 Download Datasheet

TC58NVM9S3ETA00 512m bit (64m x 8 bit) cmos nand e2prom by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC58NVM9S3ETA00
Manufacturer	Toshiba
File Size	305.73 KB
Description	512M BIT (64M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NVM9S3ETA00 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TC58NS256DC	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM	Toshiba Semiconductor
TC581282AXB	128-MBIT (16M X 8 BITS) CMOS NAND E2PROM	Toshiba Semiconductor
TC58128FT	128M-Bit CMOS NAND EPROM	Toshiba Semiconductor
TC58128FTI	128M-Bit CMOS NAND EPROM	Toshiba Semiconductor
TC5816BDC	16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM	Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number	Description
TC58NVM9S3ETAI0	512M BIT (64M x 8 BIT) CMOS NAND E2PROM
TC58NVM9S3EBAI4	512M BIT (64M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3AFT00	1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05	1 GBit CMOS NAND EPROM
TC58NVG0S3ETA00	1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVM9S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.