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TC58NVM9S3ETA00 Datasheet

Manufacturer: Toshiba
TC58NVM9S3ETA00 datasheet preview

TC58NVM9S3ETA00 Details

Part number TC58NVM9S3ETA00
Datasheet TC58NVM9S3ETA00-Toshiba.pdf
File Size 305.73 KB
Manufacturer Toshiba
Description 512M BIT (64M x 8 BIT) CMOS NAND E2PROM
TC58NVM9S3ETA00 page 2 TC58NVM9S3ETA00 page 3

TC58NVM9S3ETA00 Overview

The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NVM9S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

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