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TC58NVG0S3AFT05 Datasheet

Manufacturer: Toshiba
TC58NVG0S3AFT05 datasheet preview

TC58NVG0S3AFT05 Details

Part number TC58NVG0S3AFT05
Datasheet TC58NVG0S3AFT05_Toshiba.pdf
File Size 629.01 KB
Manufacturer Toshiba
Description 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05 page 2 TC58NVG0S3AFT05 page 3

TC58NVG0S3AFT05 Overview

The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG0S3AFT05 Key Features

  • Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes

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