TC58NVG0S3AFT05 - 1 GBit CMOS NAND EPROM

Toshiba

TC58NVG0S3AFT05 Product details

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND.

Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control.
Powersupply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles (With ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ. Erase (.

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Toshiba TC58NVG0S3AFT05-like datasheet

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