logo

TC58NVG0S3AFT00 Datasheet, Toshiba

TC58NVG0S3AFT00 Datasheet, Toshiba

TC58NVG0S3AFT00

datasheet Download (Size : 441.26KB)

TC58NVG0S3AFT00 Datasheet

TC58NVG0S3AFT00 eprom equivalent, 1 gbit cmos nand eprom.

TC58NVG0S3AFT00

datasheet Download (Size : 441.26KB)

TC58NVG0S3AFT00 Datasheet

Features and benefits

x Organization Memory cell allay 2112 u 64K u 8 Register 2112 u 8 Page size 2112bytes Block size (128K  4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseSt.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The device has a 2112-byte static registers which allow pr.

Image gallery

TC58NVG0S3AFT00 Page 1 TC58NVG0S3AFT00 Page 2 TC58NVG0S3AFT00 Page 3

TAGS

TC58NVG0S3AFT00
GBit
CMOS
NAND
EPROM
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

TC58NVG0S3AFT05

TC58NVG0S3ETA00

TC58NVG0S3HBAI4

TC58NVG0S3HBAI6

TC58NVG0S3HTA00

TC58NVG0S3HTAI0

TC58NVG1S3BFT00

TC58NVG1S3EBAI4

TC58NVG1S3ETA00

TC58NVG1S3ETAI0

TC58NVG1S3HBAI4

TC58NVG1S3HBAI6

TC58NVG1S3HTA00

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts