TC58NYG1S3HBAI4 datasheet, e2prom equivalent, Toshiba

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TC58NYG1S3HBAI4 Features and benefits

* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, .

TC58NYG1S3HBAI4 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

TC58NYG1S3HBAI4 Description

The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which a.

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