* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes
* Modes Read, Reset, Auto Page Program,.

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which a.

TC58NYG2S0HBAI6

TC58NYG2S0FBAI4

TC58NYG2S3ETA00

TC58NYG0S3EBAI4

TC58NYG0S3HBAI4

TC58NYG1S3HBAI4

TC58NYG1S3HBAI6

TC58NS100DC

TC58NS128BDC

TC58NS256BDC

TC58NS256DC

TC58NS512ADC

TC58NS512DC