Description
The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.
Features
- Organization
Memory cell array Register Page size Block size
x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
- Mode control Serial input/output
Command control.
- Number of valid blocks Min 4016 blocks Max 4096 blocks.
- Power supply VCC = 1.7V to 1.95V.
- Access time
Cell array to.
TC58NYG2S3ETA00 Datasheet
