Datasheet4U Logo Datasheet4U.com
Toshiba logo

TC58NYG2S3ETA00

TC58NYG2S3ETA00 is 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TC58NYG2S3ETA00 datasheet preview

TC58NYG2S3ETA00 Datasheet

Part number TC58NYG2S3ETA00
Download TC58NYG2S3ETA00 Datasheet (PDF)
File Size 500.42 KB
Manufacturer Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NYG2S3ETA00 page 2 TC58NYG2S3ETA00 page 3

Related Toshiba Datasheets

Part Number Description
TC58NYG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
TC58NYG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NYG2S0HBAI6 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NYG0S3EBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NYG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

TC58NYG2S3ETA00 Distributor

TC58NYG2S3ETA00 Description

The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NYG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NYG2S3ETA00 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
  • Mode control Serial input/output
  • Number of valid blocks Min 4016 blocks Max 4096 blocks
  • Power supply VCC = 1.7V to 1.95V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle) Program (avg.)
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

More datasheets by Toshiba

See all Toshiba parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts