TC58NYG2S3ETA00
Overview
The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
- Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 4016 blocks Max 4096 blocks
- Power supply VCC = 1.7V to 1.95V
- Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=30pF)
- Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 2.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
